Friday, February 3, 2012

1202.0320 (B. A. VanDevender et al.)

Performance of a TiN-coated monolithic silicon pin-diode array under
mechanical stress
   [PDF]

B. A. VanDevender, L. I. Bodine, A. W. Myers, J. F. Amsbaugh, M. A. Howe, M. L. Leber, R. G. H. Robertson, K. Tolich, T. D. Van Wechel, B. L. Wall
The Karlsruhe Tritium Neutrino Experiment (KATRIN) will detect tritium beta-
decay electrons that pass through its electromagnetic spectrometer with a
highly- segmented monolithic silicon pin-diode focal-plane detector (FPD). This
pin-diode array will be on a single piece of 500-{\mu}m-thick silicon, with
contact between titanium nitride (TiN) coated detector pixels and front-end
electronics made by spring-loaded pogo pins. The pogo pins will exert a total
force of up to 50N on the detector, deforming it and resulting in mechanical
stress up to 50 MPa in the silicon bulk. We have evaluated a prototype
pin-diode array with a pogo-pin connection scheme similar to the KATRIN FPD. We
find that pogo pins make good electrical contact to TiN and observe no effects
on detector resolution or reverse-bias leakage current which can be attributed
to mechanical stress.
View original: http://arxiv.org/abs/1202.0320

No comments:

Post a Comment